CEA-Leti and STMicroelectronics unveil route to fully monolithic silicon RF front-ends at IEDM 2025
TEM cross section of 600°C RF switch processed on standard TR commercial wafer
Credit: Julie LOCHE/STMicroelectronics
Optical communications could get a significant boost from combining silicon-germanium and RF SOI devices, enabling cheaper, denser optical IO for data centre applications
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